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| (R) BAT 47 BAT 48 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching. These devices have integrated protection against excessivevoltage such as electrostaticdischarges. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF IFRM IFSM Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Repetitive Peak Fordward Current* Surge non Repetitive Forward Current* Ta = 25 C tp 1s 0.5 tp = 10ms tp = 1s Ptot Tstg Tj TL Power Dissipation* Storage and Junction Temperature Range Maximum Temperature for Soldering during 10s at 4mm from Case Ta = 25 C DO 35 (Glass) BAT47 20 350 1 7.5 1.5 330 BAT48 40 Unit V mA A A mW C C C - 65 to + 150 - 65 to + 125 230 THERMAL RESISTANCE Symbol R th(j-l) Junction-ambient* Test Conditions Value 300 Unit C/W * On infinite heatsink with 4mm lead length August 1999 Ed: 1A 1/5 BAT 47/BAT 48 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol V(BR) IR = 10A IR = 25A V F* Tj = 25C IF = 0.1mA Tj = 25C IF = 1mA Tj = 25C IF = 10mA Tj = 25C IF = 30mA Tj = 25C IF = 150mA Tj = 25C IF = 300mA Tj = 25C IF = 50mA Tj = 25C IF = 200mA Tj = 25C IF = 500mA IR* Tj = 25C Tj = 60C Tj = 25C Tj = 60C Tj = 25C Tj = 60C Tj = 25C Tj = 60C Tj = 25C Tj = 60C Tj = 25C Tj = 60C VR = 40V VR = 20V VR = 10V BAT48 VR = 20V VR = 10V BAT47 VR = 1.5V All Types BAT48 BAT47 Test Conditions BAT47 BAT48 All Types Min. 20 40 0.25 0.3 0.4 0.5 0.8 1 0.5 0.75 0.9 1 10 4 20 10 30 2 15 5 25 25 50 A V Typ. Max. Unit V DYNAMIC CHARACTERISTICS Symbol C Tj = 25C VR = 0V Tj = 25C VR = 1V trr Tj = 25C IF = 10mA VR = 1V irr = 1mA RL = 100 Test Conditions f = 1MHz Min. Typ. 20 12 10 ns Max. Unit pF * Pulse test: tp 300s < 2%. 2/5 BAT 47/BAT 48 Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus continuous reverse voltage (typical values). 3/5 BAT 47/BAT 48 Figure 5. Capacitance C versus reverse 4/5 BAT 47/BAT 48 PACKAGE MECHANICAL DATA DO 35 Glass DIMENSIONS B note 1 E A B E note 1 / OC REF. A B C D Millimeters Min. 3.05 1.53 12.7 0.458 0.558 Max. 4.50 2.00 Inches Min. 0.120 0.060 0.500 0.018 0.022 Max. 0.177 0.079 OD / note 2 OD / Cooling method: by convection and conduction. Marking: clear, ring at cathode end. Weight: 0.015g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Spec ifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorizedfor use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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